Ferroelectric domain triggers the charge modulation in semiconductors (invited)
| Autor: | Anton V. Ievlev, Maksym V. Strikha, Anastasiia S. Pusenkova, Vladimir Ya. Shur, Sergei V. Kalinin, Ying-Hao Chu, Olexander V. Varenyk, Anna N. Morozovska, Eugene A. Eliseev |
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| Jazyk: | angličtina |
| Rok vydání: | 2014 |
| Předmět: |
Materials science
General Physics and Astronomy Dielectric FERROELECTRICITY SEMICONDUCTOR LAYERS SPONTANEOUS POLARIZATIONS FERROELECTRIC FILMS law.invention Condensed Matter::Materials Science law ANALYTICAL RESULTS FERROELECTRIC MATERIALS Single domain MODULATION CHARGE MODULATION business.industry Graphene FERROELECTRIC DOMAINS MULTI-LAYERED GRAPHENE Heterojunction Ferroelectricity Space charge FERROELECTRIC SURFACES Semiconductor Modulation Optoelectronics AMBIENT ATMOSPHERE business |
| Zdroj: | J Appl Phys Journal of Applied Physics |
| Popis: | We consider a typical heterostructure "domain patterned ferroelectric film - ultra-thin dielectric layer - semiconductor," where the semiconductor can be an electrolyte, paraelectric or multi-layered graphene. Unexpectedly, we have found that the space charge modulation profile and amplitude in the semiconductor, that screens the spontaneous polarization of a 180-deg domain structure of ferroelectric, depends on the domain structure period, dielectric layer thickness and semiconductor screening radius in a rather non-trivial nonlinear way. Multiple size effects appearance and manifestation are defined by the relationship between these three parameters. In addition, we show that the concept of effective gap can be introduced in a simple way only for a single-domain limit. Obtained analytical results open the way for understanding of current-AFM maps of contaminated ferroelectric surfaces in ambient atmosphere as well as explore the possibilities of conductivity control in ultra-thin semiconductor layers. © 2014 AIP Publishing LLC. |
| Databáze: | OpenAIRE |
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