Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors

Autor: G. Paz-Martínez, I. Íñiguez-de-la-Torre, H. Sánchez-Martín, B. García-Vasallo, N. Wichmann, T. González, J. Mateos
Přispěvatelé: Departamento de Fisica Aplicada [Salamanca], Universidad de Salamanca, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Advanced NanOmeter DEvices - IEMN (ANODE - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), This work has been partially supported through Grant No. PID2020-115842RB-I00 funded by MCIN/AEI/10.13039/501100011033. H. Sánchez-Martín acknowledges his contract to the Junta de Castilla y León.
Jazyk: angličtina
Rok vydání: 2022
Předmět:
Zdroj: Journal of Applied Physics
Journal of Applied Physics, 2022, 132 (13), pp.134501. ⟨10.1063/5.0111114⟩
ISSN: 0021-8979
1089-7550
DOI: 10.1063/5.0111114⟩
Popis: We report on the measurements of the two main figures of merit for microwave detection, namely, responsivity and noise equivalent power (NEP), in HEMTs based on two of the most broadly used material systems AlGaN/GaN and AlInAs/InGaAs. A comparison between their performances as RF detectors in a wide temperature range is provided by means of experiments made under probes with direct connection to the drain contact. InGaAs HEMTs exhibit much better responsivity and NEP, which are further improved when lowering the working temperature. Moreover, we analyze the possibility of optimizing the current-mode detection of the transistors by improving the impedance matching conditions through an adequate choice of the device width [Formula: see text].
Databáze: OpenAIRE
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