Analysis of dislocation configurations in a [0 0 1] fcc single crystal by electron channeling contrast imaging in the SEM
| Autor: | Ivan Gutierrez-Urrutia |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Diffraction Materials science Condensed matter physics Scanning electron microscope Alloy 02 engineering and technology Electron engineering.material 021001 nanoscience & nanotechnology 01 natural sciences Radius of curvature (optics) Condensed Matter::Materials Science Crystallography Structural Biology Transmission electron microscopy 0103 physical sciences engineering Radiology Nuclear Medicine and imaging Dislocation 0210 nano-technology Instrumentation Single crystal |
| Zdroj: | Microscopy. |
| ISSN: | 2050-5701 2050-5698 |
| Popis: | We have investigated the dislocation configurations in a [0 0 1] single crystal of a face-centered alloy (316L stainless steel) by the electron channeling contrast imaging (ECCI) technique in the scanning electron microscope under controlled diffraction conditions. Specific dislocations such as piled-up dislocations and Lomer-Cottrell dislocations were characterized by the analysis of dislocation contrast and dislocation line trace analysis. The ECCI technique also allows the sound estimation of the local resolved stress acting on gliding dislocations by the analysis of the radius of curvature following a transmission electron microscopy-based geometrical approach. |
| Databáze: | OpenAIRE |
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