SPICE Modeling of Photoelectric Effects in Silicon With Generalized Devices
| Autor: | Jean-Michel Sallese, Chiara Rossi, Pietro Buccella, Camillo Stefanucci |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
Silicon 020209 energy Spice chemistry.chemical_element photo sensor substrate 02 engineering and technology photocurrent 7. Clean energy law.invention spice law Solar cell 0202 electrical engineering electronic engineering information engineering Electrical and Electronic Engineering business.industry Photoelectric sensor modeling Electronic Optical and Magnetic Materials solar cell Semiconductor chemistry smart power ics pn junction Optoelectronics lcsh:Electrical engineering. Electronics. Nuclear engineering Transient (oscillation) Resistor business p–n junction lcsh:TK1-9971 Biotechnology |
| Zdroj: | IEEE Journal of the Electron Devices Society, Vol 6, Pp 987-995 (2018) |
| ISSN: | 2168-6734 |
| DOI: | 10.1109/jeds.2018.2817286 |
| Popis: | Modeling photoelectric effects in semiconductors with electrical simulators is demonstrated in typical 1-D and 2-D architectures. The concept is based on a coarse meshing of the semiconductor with the so-called generalized lumped devices, where equivalent voltages and currents are used in place of minority carrier excess concentrations and minority carrier gradients, respectively, and where the light-induced excess carrier concentration in silicon is introduced by means of internal current sources. Generation, propagation, and collection of these minority carriers are analyzed for different structures which can behave as photosensors or solar cells. Both static and transient operations are found in good agreement with TCAD numerical simulations while using the same physical and geometrical parameters. |
| Databáze: | OpenAIRE |
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