Silicon heterojunction solar cells: Optimization of emitter and contact properties from analytical calculation and numerical simulation
| Autor: | Lars Korte, Marie-Estelle Gueunier-Farret, R. Varache, Jean-Paul Kleider |
|---|---|
| Přispěvatelé: | SCM - Equipe Semiconducteurs en Couches Minces, Laboratoire de génie électrique de Paris (LGEP), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS) |
| Rok vydání: | 2013 |
| Předmět: |
010302 applied physics
Amorphous silicon Materials science Passivation business.industry Mechanical Engineering Doping Heterojunction 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 7. Clean energy 01 natural sciences chemistry.chemical_compound Band bending chemistry Mechanics of Materials 0103 physical sciences Optoelectronics General Materials Science Work function Crystalline silicon 0210 nano-technology business Common emitter |
| Zdroj: | Materials Science and Engineering: B Materials Science and Engineering: B, Elsevier, 2013, 178 (9), pp.593-598. ⟨10.1016/j.mseb.2012.11.011⟩ Materials Science and Engineering: B, 2013, 178 (9), pp.593-598. ⟨10.1016/j.mseb.2012.11.011⟩ |
| ISSN: | 0921-5107 |
| Popis: | International audience; The key constituent of silicon heterojunction solar cells, the amorphous silicon/crystalline silicon heterojunction (a-Si:H/c-Si), offers a high open-circuit voltage (Voc) potential providing that both the interface defect passivation and the band bending in the c-Si absorber are sufficient. We detail here analytical calculations of the equilibrium band bending in c-Si (ψc-Si) in Transparent Conductive Oxide (TCO)/a-Si:H emitter/c-Si absorber structures. We studied the variation of some electronic parameters (density of states, work function) according to relevant experimental values. This study introduces a discussion on the optimization of the doped emitter layer in relation with the work function of the TCO. In particular, we argue on the advantage of having a highly defective (p)a-Si:H emitter layer that maximizes ψc-Si and reduces the influence of the TCO on Voc. |
| Databáze: | OpenAIRE |
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