Design and technology of vertical-cavity surface-emitting lasers with nonconducting epitaxial mirrors

Autor: M. M. Kulagina, A. G. Kuzmenkov, Nikolai N. Ledentsov, D. A. Bedarev, A. P. Vasil’ev, A. E. Zhukov, V. M. Ustinov, S. S. Mikhrin, Yu. M. Shernyakov, Yu. M. Solov’ev, A.P. Kovsh, A. S. Shulenkov, Nikolai A. Maleev, Yu. M. Zadiranov, V. A. Bykovskii, C. Moller
Přispěvatelé: Publica
Rok vydání: 2003
Předmět:
Zdroj: Semiconductors. 37:1234-1238
ISSN: 1090-6479
1063-7826
DOI: 10.1134/1.1619524
Popis: Design and technology problems in the fabrication of vertical-cavity surface-emitting lasers (VCSELs) equipped with nonconducting distributed Bragg reflectors (DBRs) and fabricated using molecular-beam epitaxy are considered. VCSELs with an active region were formed on the basis of InGaAs quantum wells and incorporated an AlGaAs/GaAs bottom DBR and an oxidized AlGaO/GaAs top DBR; the diameter of the oxidized aperture was equal to 7-12 µm. The devices exhibit a continuous-wave lasing at room temperature with threshold currents of 0.5-1.5 mA, a differential efficiency as high as 0.5 mW/mA, and a highest output power of 3 mW.
Databáze: OpenAIRE