Electronic structure evolution of single bilayer Bi(1 1 1) film on 3D topological insulator Bi2Se x Te3-x surfaces
| Autor: | Wen Jie Li, Kyung-Hwan Jin, Feng Liu, Tao Lei, Nian Zhang, Chen Liu, Rui Wu, Jia Li Zhao, Jiaou Wang, Hai Jie Qian, Kurash Ibrahim |
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| Rok vydání: | 2016 |
| Předmět: |
Condensed matter physics
Photoemission spectroscopy Bilayer Angle-resolved photoemission spectroscopy 02 engineering and technology Electronic structure Substrate (electronics) 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electron spectroscopy Topological insulator 0103 physical sciences General Materials Science 010306 general physics 0210 nano-technology Electronic band structure |
| Zdroj: | Journal of physics. Condensed matter : an Institute of Physics journal. 28(25) |
| ISSN: | 1361-648X |
| Popis: | The electronic state evolution of single bilayer (1BL) Bi(1 1 1) deposited on three-dimensional (3D) Bi2Se x Te3-x topological insulators at x = 0, 1.26, 2, 2.46, 3 is systematically investigated by angle-resolved photoemission spectroscopy (ARPES). Our results indicate that the electronic structures of epitaxial Bi films are strongly influenced by the substrate especially the topmost sublayer near the Bi films, manifesting in two main aspects. First, the Se atoms cause a stronger charge transfer effect, which induces a giant Rashba-spin splitting, while the low electronegativity of Te atoms induces a strong hybridization at the interface. Second, the lattice strain notably modifies the band dispersion of the surface bands. Furthermore, our experimental results are elucidated by first-principles band structure calculations. |
| Databáze: | OpenAIRE |
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