Closed-Loop Compensation of Charge Trapping Induced by Ionizing Radiation in MOS Capacitors

Autor: Manuel Dominguez-Pumar, Chenna Reddy Bheesayagari, Gema Lopez-Rodriguez, Sergi Gorreta, Joan Pons-Nin
Přispěvatelé: Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica, Universitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions, Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
Rok vydání: 2018
Předmět:
Ionizing radiation
Materials science
Capacitance
Radiation effects
Charge trapping control
02 engineering and technology
Dielectric
Radiation
01 natural sciences
Industrial electronics
law.invention
law
MIS capacitors
0103 physical sciences
Charge control
0202 electrical engineering
electronic engineering
information engineering

Irradiation
Electrical and Electronic Engineering
CDielectrics
Metal oxide semiconductors
Modulation
MOS capacitors
010308 nuclear & particles physics
business.industry
Capacitance-voltage characteristics
Sigma-delta modulation
Física::Física de l'estat sòlid::Semiconductors [Àrees temàtiques de la UPC]
020208 electrical & electronic engineering
Charge (physics)
Metall-òxid-semiconductors
Capacitor
Control and Systems Engineering
Optoelectronics
business
Electrònica industrial
Zdroj: UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Recercat. Dipósit de la Recerca de Catalunya
instname
ISSN: 1557-9948
0278-0046
Popis: The objective of this paper is to explore the capability of a charge trapping control loop to continuously compensate charge induced by ionizing radiation in the dielectric of metal–oxide–semiconductor (MOS) capacitors. To this effect, two devices made with silicon oxide have been simultaneously irradiated with gamma radiation: one with constant voltage bias and the other working under a dielectric charge control. The experiment shows substantial charge trapping in the uncontrolled device, whereas, at the same time, the control loop is able to compensate the charge induced by gamma radiation in the second device.
Databáze: OpenAIRE