Kinetics of low temperature direct copper–copper bonding
Autor: | V. Carron, Marc Verdier, P. Gondcharton, B. Imbert, L. Benaissa |
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Rok vydání: | 2015 |
Předmět: |
010302 applied physics
Materials science business.industry chemistry.chemical_element [CHIM.MATE]Chemical Sciences/Material chemistry 02 engineering and technology Thermocompression bonding Direct bonding Atmospheric temperature range 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Copper Electronic Optical and Magnetic Materials chemistry Hardware and Architecture Anodic bonding 0103 physical sciences Microelectronics Electrical and Electronic Engineering Composite material 0210 nano-technology business Strengthening mechanisms of materials Metallic bonding |
Zdroj: | Microsystem Technologies Microsystem Technologies, Springer Verlag, 2015, 21 (5), pp.995-1001. ⟨10.1007/s00542-015-2436-4⟩ |
ISSN: | 1432-1858 0946-7076 |
Popis: | International audience; Wafer level metal bonding involving copper layers is a key technology for three-dimensional integration. An appropriate surface activation can be performed in order to obtain room temperature direct bonding with bonding strength to be compatible with microelectronic device integration. In this paper, we focus on bonding strengthening mechanisms in the low temperature range from 20 to 100 A degrees C. In order to improve the bonding interface closure, several process parameters are studied: water amount available when surfaces are brought into contact and copper layers deposition technique have been identified to be predominant in this low temperature range. Based on metal oxidation theory, several mechanisms are proposed and some calculations on this bonding strengthening are performed. For the first time, activation energies of this phenomenon are obtained for copper layers deposited by different method in the specific environment of the bonding interface. This study gives guidelines and recommendations for the integration of this metal bonding technique at low temperature. |
Databáze: | OpenAIRE |
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