Flexible One-Dimensional Metal–Insulator–Graphene Diode
| Autor: | Enrique G. Marin, Mehrdad Shaygan, Gianluca Fiori, Mohamed Saeed Elsayed, Zhenxing Wang, Daniel Neumaier, Burkay Uzlu, Giuseppe Iannaccone, Martin Otto, Mário Ribeiro, Renato Negra |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
FOS: Physical sciences Applied Physics (physics.app-ph) 02 engineering and technology Substrate (electronics) 7. Clean energy 01 natural sciences Capacitance law.invention law 0103 physical sciences Materials Chemistry Electrochemistry Diode 010302 applied physics Capacitive coupling Graphene business.industry Physics - Applied Physics 021001 nanoscience & nanotechnology Cathode Electronic Optical and Magnetic Materials Anode Optoelectronics 0210 nano-technology business Current density |
| Zdroj: | ACS Applied Electronic Materials |
| ISSN: | 2637-6113 |
| DOI: | 10.1021/acsaelm.9b00122 |
| Popis: | In this work, a novel one-dimensional geometry for metal-insulator-graphene (1D-MIG) diode with low capacitance is demonstrated. The junction of the 1D-MIG diode is formed at the 1D edge of Al2O3-encapsulated graphene with TiO2 that acts as barrier material. The diodes demonstrate ultra-high current density since the transport in the graphene and through the barrier is in plane. The geometry delivers very low capacitive coupling between the cathode and anode of the diode, which shows frequency response up to 100 GHz and ensures potential high frequency performance up to 2.4 THz. The 1D-MIG diodes are demonstrated to function uniformly and stable under bending conditions down to 6.4 mm bending radius on flexible substrate. |
| Databáze: | OpenAIRE |
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