High-Performance Ultrathin Body c-SiGe Channel FDSOI pMOSFETs Featuring SiGe Source and Drain: Vth Tuning, Variability, Access Resistance, and Mobility Issues
| Autor: | F. Allain, Olivier Faynot, Mickaël Cassé, David Cooper, Cyrille Le Royer, Olivier Weber, Sorin Cristoloveanu, Jean-Michel Hartmann, Claude Tabone, Francois Andrieu, Bernard Previtali, Pierre Perreau, A. Villalon, P. Scheiblin, Jaome Mazurier |
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| Přispěvatelé: | Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Département d'Astrophysique, de physique des Particules, de physique Nucléaire et de l'Instrumentation Associée (DAPNIA), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2013 |
| Předmět: |
Materials science
Silicon on insulator chemistry.chemical_element 02 engineering and technology Epitaxy 01 natural sciences chemistry.chemical_compound 0103 physical sciences MOSFET Wafer Electrical and Electronic Engineering [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics Metal gate ComputingMilieux_MISCELLANEOUS 010302 applied physics Access resistance business.industry Electrical engineering 021001 nanoscience & nanotechnology Electronic Optical and Magnetic Materials Silicon-germanium chemistry Optoelectronics 0210 nano-technology business Tin |
| Zdroj: | IEEE Transactions on Electron Devices IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2013, 60 (5), pp.1568-1574. ⟨10.1109/TED.2013.2255055⟩ IEEE Transactions on Electron Devices, 2013, 60 (5), pp.1568-1574. ⟨10.1109/TED.2013.2255055⟩ |
| ISSN: | 0018-9383 |
| Popis: | We report on ultrascaled (LG = 23 nm) compressively strained SiGe-based FDSOI pMOSFET with ultrathin body. The devices have been fabricated using a high-K metal gate (TiN/HfSiON) process flow. SiGe channels (3.4 nm) have been epitaxially grown on 3-nm thick 300-mm SOI wafers and combined with embedded Si0.7Ge0.3(:B) raised source and drain (RSD) for Vth,p tuning and smart strain management. Indepth electrical characterizations point out the +120-mV Vth,p tuning, the excellent short-channel, and DIBL control (similar to SOI reference), and show for the first time extremely low variability for SiGe-based FD pMOSFETs. Furthermore, we investigate hole-transport properties as a function of gate length and temperature and demonstrate 60% Raccess reduction with SiGe RSD and +330% mobility enhancement at 23-nm gate length with respect to 7-nm thick SOI reference. |
| Databáze: | OpenAIRE |
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