Transient Thermoreflectance for Gate Temperature Assessment in Pulse Operated GaN-Based HEMTs
| Autor: | Helmut Jung, Sara Martin-Horcajo, Hervé Blanck, Martin Kuball, Benoit Lambert, James W Pomeroy |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Gate temperature Gallium nitride Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology High-electron-mobility transistor 01 natural sciences Temperature measurement GaN law.invention chemistry.chemical_compound symbols.namesake law 0103 physical sciences Hardware_INTEGRATEDCIRCUITS CDTR Electrical and Electronic Engineering HEMT 010302 applied physics Time resolved Raman thermography business.industry Transistor 021001 nanoscience & nanotechnology Electronic Optical and Magnetic Materials Transient thermoreflectance Self-heating chemistry Logic gate Thermography symbols Optoelectronics Transient (oscillation) 0210 nano-technology business Raman spectroscopy |
| Zdroj: | Martin Horcajo, S, Pomeroy, J, Lambert, B, Jung, H, Blanck, H & Kuball, M 2016, ' Transient Thermoreflectance for Gate Temperature Assessment in Pulse Operated GaN-based HEMTs ', IEEE Electron Device Letters, vol. 37, no. 9, pp. 1197-1200 . https://doi.org/10.1109/LED.2016.2595400 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2016.2595400 |
| Popis: | An experimental method to measure the gate metal temperature of GaN-based high electron mobility transistors is demonstrated. The technique is based on transient thermoreflectance measurements performed from the backside of the device. The thermoreflectance coefficient of the gate metal was calibrated by correlating the relative change of its optical reflectivity with the temperature change measured in the GaN layer using time-resolved Raman thermography during the device cooling transient. Simulated temperature transients were in good agreement with the experimental data. The main advantage of this new method is that it enables the direct assessment of gate metal temperature under device pulsed operation regardless of the device design. |
| Databáze: | OpenAIRE |
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