Realization of sub-micron patterns on GaAs using a HSQ etching mask
| Autor: | D. Lauvernier, Christiane Legrand, S. Garidel, Jean-Pierre Vilcot |
|---|---|
| Přispěvatelé: | Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF) |
| Jazyk: | angličtina |
| Rok vydání: | 2005 |
| Předmět: |
Nanostructure
Materials science Nanotechnology 02 engineering and technology Surface finish 01 natural sciences chemistry.chemical_compound Etching (microfabrication) 0103 physical sciences Electrical and Electronic Engineering Reactive-ion etching Hydrogen silsesquioxane 010302 applied physics business.industry 021001 nanoscience & nanotechnology Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Resist chemistry Optoelectronics Dry etching 0210 nano-technology business Layer (electronics) |
| Zdroj: | Microelectronic Engineering Microelectronic Engineering, Elsevier, 2005, 77, pp.210-216 Microelectronic Engineering, 2005, 77, pp.210-216 |
| ISSN: | 0167-9317 1873-5568 |
| Popis: | Hydrogen SilSesQuioxane is now known for its possibilities as negative tone e-beam resist. Good quality patterning can be obtained with low roughness. We report here the transfer of this pattern to a GaAs layer. Our aim is to fabricate nano-photonic structures with the lowest roughness and the most vertical walled profiles by means of GaAs reactive ion etching technique using SiCl"4/Ar chemistry. To do so, the etching resistance of the HSQ mask needs to be strenghten and an optimization of the etching step is necessary. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect