A New Test Environment Approach to SEE Detection in MOSFETs

Autor:	M. A. G. Silveira, Nilberto H. Medina, Salvador Pinillos Gimenez, Nemitala Added, V. A. P. Aguiar, L. E. Seixas
Rok vydání:	2015
Předmět:	Engineering business.industry Transistor General Engineering Electrical engineering Diamond engineering.material Geometric factor law.invention Pelletron CMOS Single effect law MOSFET Electronic engineering Heavy ion business
Zdroj:	Biblioteca Digital de Teses e Dissertações da FEI Centro Universitário da Fundação Educacional Inaciana (FEI) instacron:FEI
ISSN:	1662-8985
DOI:	10.4028/www.scientific.net/amr.1083.197
Popis:	This paper shows a comparison between two different MOSFET structures: a conventional layout (CM) and Diamond (DM - enclosed layout transistor), as tolerance to the Single Event effect - SEE. Both CMOS 0.35μm technology devices types have the same geometric factor (W/L) and during irradiation were monitored continuously to detect and acquire the SEEs applying a new approach with a PXI test system. For this work was used heavy ion beams produced at the São Paulo 8 UD Pelletron accelerator.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4c20a4a25515e1cace2007ea1e04fa23 https://doi.org/10.4028/www.scientific.net/amr.1083.197 Zobrazit plný text záznamu