Reduction in overlay error from mark asymmetry using simulation and alignment models
| Autor: | Igor Matheus Petronella Aarts, Robert John Socha, Chris de Ruiter, Manouk Rijpstra, Krishanu Shome, Sudhar Raghunathan, Jonathan Y. Lee, Leendertjan Karssemeijer, Jan Hermans, Boris Menchtchikov, Philippe Leray, Chumeng Zheng, Ralph Brinkhof, Floris Teeuwisse, Henry Megens, Chung-Tien Li, Irina Lyulina |
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| Rok vydání: | 2018 |
| Předmět: |
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Computer science media_common.quotation_subject 02 engineering and technology Overlay 021001 nanoscience & nanotechnology 01 natural sciences Asymmetry Weighting 010309 optics Reduction (complexity) 0103 physical sciences High order 0210 nano-technology Algorithm Simulation based media_common |
| Zdroj: | Optical Microlithography XXXI |
| Popis: | Three methods to minimize the impact of alignment mark asymmetry on overlay variation are demonstrated. These methods are measurement based optimal color weighting (OCW), simulation based optimal color weighting, and wafer alignment model mapping (WAMM). Combination of WAMM and OCW methods delivers the highest reduction in overlay variation of 1.3nm (X direction) and 1.2nm (Y direction) as compared to best single color recipe. Simulation based OCW produces a similar reduction in overlay variation as compared to measurement based OCW, and simulation based OCW has the advantage that the scanner alignment recipe with optimize weights can be determined before the mark asymmetry excursion has occurred. Finally, WAMM is capable of reducing the contribution of mark asymmetry on overlay by using a more optimal high order wafer alignment recipe. Capabilities of WAMM can also be combined with OCW solutions. |
| Databáze: | OpenAIRE |
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