Photoelectrical detection of nitrogenvacancy centers by utilizing diamond lateral p–i–n diodes
| Autor: | Takayuki Iwasaki, Toshiharu Makino, Satoshi Yamasaki, M. Shiigai, T. Tsuji, Hiromitsu Kato, Yoichiro Hironaka, Mutsuo Ogura, Mutsuko Hatano, Tuan Minh Hoang, K. Suda, Takuya Murooka, Bang Yang, Keisuke Mizuno |
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| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Photocurrent Materials science Physics and Astronomy (miscellaneous) business.industry Diamond 02 engineering and technology engineering.material 021001 nanoscience & nanotechnology Magnetostatics 01 natural sciences Ion Ion implantation Depletion region Vacancy defect 0103 physical sciences engineering Optoelectronics 0210 nano-technology business Diode |
| Zdroj: | Applied Physics Letters (special topic on Ultrawide Bandgap Semiconductors). 118:253502 |
| Popis: | We demonstrate a photoelectrical readout of negatively charged nitrogen-vacancy (NV−) centers by utilizing a lateral diamond p–i–n diode structure. We found that the photocarriers generated at NV centers are efficiently extracted in the depletion layer even at zero voltage. The transport mechanism for photoexcited minority carriers was investigated by varying the nitrogen ion implantation dose. The minority carrier diffusion length decreased when the photocarriers passed through the implantation region, particularly at a high nitrogen ion dose. From photoelectrically detected magnetic resonance (PDMR) measurements, the photocurrent was found to exhibit a minimum at approximately 2.87 GHz upon microwave irradiation with a contrast of 12%, while this dip was observed to split upon the application of a static magnetic field. The PDMR signal was found to depend on the measurement position. This study paves the way for efficient electrical detection for quantum sensors based on device technologies. |
| Databáze: | OpenAIRE |
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