Defect Observations of Ni/AlGaN/GaN Schottky Contacts on Si Substrates Using Scanning Internal Photoemission Microscopy
| Autor: | Takashi Egawa, Hiroyoshi Imadate, Kenji Shiojima, Koh Matsumoto, Yuya Yamaoka, Hiroaki Konishi |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Photocurrent Materials science Physics and Astronomy (miscellaneous) business.industry Photoemission microscopy General Engineering General Physics and Astronomy Schottky diode Heterojunction 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Crystallographic defect Crystal Silicon photomultiplier 0103 physical sciences Optoelectronics 0210 nano-technology business Hillock |
| Zdroj: | Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials. |
| DOI: | 10.7567/ssdm.2017.ps-6-13 |
| Popis: | We have demonstrated the use of scanning internal photoemission microscopy (SIPM) to characterize crystal defects in an AlGaN/GaN heterostructure grown on Si substrates. SIPM enabled the visualization of unusually grown regions owing to cracking of the Si substrates. In these regions, photocurrent was large, which was consistent with leaky current–voltage characteristics. We also found smaller photoyield regions, which may originate from the Al-rich AlGaN regions on hillocks. We confirmed the usefulness of SIPM for investigating the inhomogeneity of crystal quality and electrical characteristics from macroscopic viewpoints. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|