Physically defined silicon triple quantum dots charged with few electrons in metal-oxide-semiconductor structures
| Autor: | Ryoichi Ishihara, Shunri Oda, Soichiro Hiraoka, K. Horibe, Tetsuo Kodera |
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| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) Silicon business.industry Nanowire chemistry.chemical_element 02 engineering and technology Substrate (electronics) Electron Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology 01 natural sciences law.invention Capacitor Computer Science::Emerging Technologies chemistry Quantum dot law 0103 physical sciences Optoelectronics Resistor 0210 nano-technology business Quantum tunnelling |
| Zdroj: | Appl. Phys. Lett. 117 |
| Popis: | Physically defined silicon triple quantum dots (TQDs) are fabricated on a silicon-on-insulator substrate by dry-etching. The fabrication method enables us to realize a simple structure that does not require gates to create quantum dot confinement potentials and is highly advantageous for integration. We observe the few-electron regime and resonant tunneling points in the TQDs by applying voltages to two plunger gates at a temperature of 4.2 K. Moreover, we reproduce the measured charge stability diagram by simulation with an equivalent-circuit model composed of capacitors and resistors. The equivalent-circuit simulation makes it clear that we realize three QDs in series within the nanowire, as planned. This circuit model also elucidates the mechanism of resonant tunneling and identifies a quadruple point of TQDs. |
| Databáze: | OpenAIRE |
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