Design and fabrication of high-k filled sub-100 nm gap resonators with embedded dielectric field effect transistor for ultra high frequency applications
| Autor: | Wolfgang A. Vitale, Montserrat Fernandez-Bolanos, Emanuele A. Casu, Mariazel Maqueda Lopez, Adrian M. Ionescu |
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| Rok vydání: | 2016 |
| Předmět: |
Fabrication
Materials science business.industry 020206 networking & telecommunications 02 engineering and technology Dielectric 01 natural sciences Resonator Atomic layer deposition Ultra high frequency 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Electronic engineering Optoelectronics Field-effect transistor Radio frequency business 010301 acoustics High-κ dielectric |
| Zdroj: | Silicon Nanoelectronics Workshop (SNW) 2016 IEEE |
| DOI: | 10.1109/snw.2016.7577989 |
| Popis: | RF channel selection in front end systems enabling Software Defined Cognitive Radios and low power communication requires resonators with high quality factor (Q) and 50O impedance matching [1]. Electromechanical resonators can reach very high Q but suffer of high mechanical impedance. Partially and completely filled gap resonators with capacitive [2] and piezoresistive readouts [3] have been previously proposed as a solution to reduce the motional impedance. Moreover field effect transistor (FET) readout has been demonstrated with air gap coupling [4] to enhance the current amplification and thus the impedance matching. In this work we present the integration in the same device of an ultra high frequency single crystal silicon ring resonator with an HfO2 gate dielectric MOSFET where the gap dielectric is deposited by atomic layer deposition (ALD) to reduce the resonator airgap improving resonator characteristic. |
| Databáze: | OpenAIRE |
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