Temperature Effect on Al/p-CuInS2/SnO2(F) Schottky Diodes
| Autor: | S. Belgacem, M. Jemai, T. Ben Nasrallah, D. Mahboub |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Schottky barrier Schottky diodes Thermionic emission 02 engineering and technology 01 natural sciences Lambert function 0103 physical sciences lcsh:Technology (General) 010302 applied physics CuInS2 Condensed matter physics lcsh:T58.5-58.64 lcsh:Information technology Schottky diode Conductance Heterojunction Atmospheric temperature range 021001 nanoscience & nanotechnology thin films lcsh:TA1-2040 lcsh:T1-995 Grain boundary 0210 nano-technology spray pyrolysis lcsh:Engineering (General). Civil engineering (General) Current density |
| Zdroj: | Engineering, Technology & Applied Science Research, Vol 9, Iss 5 (2019) |
| ISSN: | 1792-8036 2241-4487 |
| Popis: | In this paper, Schottky diodes (SDs) obtained by evaporated thin films of aluminum on pulverized p-CuInS2/SnO2:F have been studied using J-V-T characteristics in a temperature range of 200-340K. These characteristics show that aluminum acts as a rectifier metal-semiconductor contact. Characteristic variables of the Al/p-CuInS2/SnO2:F junctions, such as the current density, the serial resistance, the parallel conductance, the Schottky barrier height (SBH), and the ideality factor of the SD were obtained by fitting the J-V-T data using the Lambert function. Data analysis was conducted with the use of MATLAB. Results showed that n is greater than 1, which could be explained by the existence of inhomogeneities due to the grain boundaries in CuInS2. Through this analysis, one can see a good agreement between experimental and modeled data. The study has shown that the main contribution in the current conduction in such heterostructures is the thermionic emission (TE) supported by the recombination of the carriers. The last phenomenon appears mainly in the grain boundaries, which contain both intrinsic and extrinsic defects (secondary phases, segregated oxygen). An investigation of the J-V-T characteristics according to TE theory has demonstrated that the current density and the SBH increase while serial resistance, parallel conductance decrease with an increase in temperature. After an SBH inhomogeneity correction, the modified Richardson constant and the mean barrier height were found to be 120AK-2cm-2and 1.29eV respectively. This kind of behavior has been observed in many metal-semiconductor contacts. |
| Databáze: | OpenAIRE |
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