Programmable ferroelectric tunnel memristor
| Autor: | Dietrich Hesse, Marin Alexe, Andy Quindeau |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2014 |
| Předmět: |
Resistive touchscreen
ferroelectric tunnel junction Materials science Condensed matter physics Materials Science (miscellaneous) Physics Biophysics General Physics and Astronomy ferroelectric switching Memristor Epitaxy Ferroelectricity lcsh:QC1-999 KAI Resistive random-access memory law.invention multiferroic oxides Switching time law Electrode Physical and Theoretical Chemistry memristor lcsh:Physics Mathematical Physics Quantum tunnelling |
| Zdroj: | Frontiers in Physics, Vol 2 (2014) |
| ISSN: | 2296-424X |
| DOI: | 10.3389/fphy.2014.00007 |
| Popis: | We report an analogously programmable memristor based on genuine electronic resistive switching combining ferroelectric switching and electron tunneling. The tunnel current through an 8 unit cell thick epitaxial Pb(Zr[0.2]Ti[0.8])O[3] film sandwiched between La[0.7]Sr[0.3]MnO[3] and cobalt electrodes obeys the Kolmogorov-Avrami-Ishibashi model for bidimensional growth with a characteristic switching time in the order of 10^-7 seconds. The analytical description of switching kinetics allows us to develop a characteristic transfer function that has only one parameter viz. the characteristic switching time and fully predicts the resistive states of this type of memristor. |
| Databáze: | OpenAIRE |
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