Radiation Effects in Carbon Nanoelectronics
| Autor: | Scott R. Messenger, Brian J. Landi, Jeremy T. Robinson, Julian J. McMorrow, Cory D. Cress, Seth M. Hubbard |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2012 |
| Předmět: |
Materials science
Computer Networks and Communications lcsh:TK7800-8360 Nanotechnology Dielectric Carbon nanotube law.invention law SWCNT Irradiation Electrical and Electronic Engineering Radiation hardening radiation hardening TID Graphene graphene lcsh:Electronics FET Condensed Matter::Mesoscopic Systems and Quantum Hall Effect total ionizing dose Nanoelectronics Hardware and Architecture Control and Systems Engineering Absorbed dose Signal Processing Hardening (metallurgy) carbon nanoelectronics single walled carbon nanotubes |
| Zdroj: | Electronics, Vol 1, Iss 1, Pp 23-31 (2012) Electronics Volume 1 Issue 1 Pages: 23-31 |
| ISSN: | 2079-9292 |
| Popis: | We experimentally investigate the effects of Co-60 irradiation on the electrical properties of single-walled carbon nanotube and graphene field-effect transistors. We observe significant differences in the radiation response of devices depending on their irradiation environment, and confirm that, under controlled conditions, standard dielectric hardening approaches are applicable to carbon nanoelectronics devices. |
| Databáze: | OpenAIRE |
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