Control of Sub-Nanosecond Precessional Magnetic Switching in STT-MRAM Cells for SRAM Applications
| Autor: | Ursula Ebels, M. Marins de Castro, B. Dieny, B. Rodmacq, Stéphane Auffret, Liliana D. Buda-Prejbeanu, I. L. Prejbeanu, Ricardo C. Sousa, B. Lacoste |
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| Přispěvatelé: | SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA) |
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Physics Magnetoresistive random-access memory 02 engineering and technology Nanosecond 021001 nanoscience & nanotechnology Magnetostatics 01 natural sciences Aspect ratio (image) Switching time Stack (abstract data type) 0103 physical sciences Electronic engineering Static random-access memory [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] 0210 nano-technology Dram |
| Zdroj: | IEEE 8th International Memory Workshop (IMW) IEEE 8th International Memory Workshop (IMW), May 2016, Paris, France. ⟨10.1109/IMW.2016.7495262⟩ 2016 IEEE 8th International Memory Workshop (IMW) |
| Popis: | International audience; STT-MRAM are foreseen as the best contender forDRAM replacement. STT-MRAM could also be used for SRAMapplications if switching time below 1ns could be realized in areliable way. In this study, we demonstrate that sub-ns switchingwith final state determined by the current polarity through thestack can be achieved in STT-MRAM cells comprising two spinpolarizinglayers having orthogonal magnetic anisotropies [1],[2].We carried out a thorough experimental and modeling study ofthese ultrafast STT-MRAM. We demonstrated that a quitereliable switching can be achieved by increasing the cell aspectratio (AR) or advantageously by applying an in-plane statictransverse field on the cell. Switching in 200ps could bedemonstrated with write energy less than 100fJ. |
| Databáze: | OpenAIRE |
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