Large Damping-Like Spin–Orbit Torque in a 2D Conductive 1T-TaS2 Monolayer
| Autor: | Prabhat Kumar, Sajid Husain, Sujeet Chaudhary, Nilamani Behera, Rimantas Brucas, Tomas Edvinsson, Biplab Sanyal, Xin Chen, F. García-Sánchez, Rahul Gupta, Peter Svedlindh, Ankit Kumar |
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| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Letter
Bioengineering 02 engineering and technology Planar Hall effect Spin-torque ferromagnetic resonance Monolayer Astrophysics::Solar and Stellar Astrophysics Torque General Materials Science Spin orbit torque Electrical conductor Spin-½ Physics Planar hall effect Condensed matter physics Mechanical Engineering General Chemistry Transition-metal dichalcogenide 021001 nanoscience & nanotechnology Condensed Matter Physics Physics::Space Physics Condensed Matter::Strongly Correlated Electrons Astrophysics::Earth and Planetary Astrophysics 0210 nano-technology Den kondenserade materiens fysik Damping-like torque |
| Zdroj: | Nano Letters |
| ISSN: | 1530-6992 1530-6984 |
| Popis: | A damping-like spin-orbit torque (SOT) is a prerequisite for ultralow-power spin logic devices. Here, we report on the damping-like SOT in just one monolayer of the conducting transition-metal dichalcogenide (TMD) TaS2 interfaced with a NiFe (Py) ferromagnetic layer. The charge-spin conversion efficiency is found to be 0.25 +/- 0.03 in TaS2(0.88)/Py(7), and the spin Hall conductivity (14.9 x 10(s) h/2e Omega(-1) m(-1) is found to be superior to values reported for other TMDs. We also observed sizable field-like torque in this heterostructure. The origin of this large damping-like SOT can be found in the interfacial properties of the TaS2/Py heterostructure, and the experimental findings are complemented by the results from density functional theory calculations. It is envisioned that the interplay between interfacial spinorbit coupling and crystal symmetry yielding large damping-like SOT. The dominance of damping-like torque demonstrated in our study provides a promising path for designing the next-generation conducting TMD-based low-powered quantum memory devices. |
| Databáze: | OpenAIRE |
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