Single Crystalline InGaAs Nanopillar Grown on Polysilicon with Dimensions beyond the Substrate Grain Size Limit
| Autor: | Wai Son Ko, Connie J. Chang-Hasnain, Fanglu Lu, Thai-Truong D. Tran, Kar Wei Ng, Roger Chen |
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| Rok vydání: | 2013 |
| Předmět: |
Optics and Photonics
Silicon Materials science Nanostructure Polymers Surface Properties FOS: Physical sciences chemistry.chemical_element Gallium Bioengineering Substrate (electronics) Epitaxy Indium Arsenicals Crystal General Materials Science Nanopillar Condensed Matter - Materials Science business.industry Lasers Mechanical Engineering Materials Science (cond-mat.mtrl-sci) General Chemistry Condensed Matter Physics Grain size Nanostructures chemistry Optoelectronics Crystallization Contact area business Physics - Optics Optics (physics.optics) |
| Zdroj: | Nano Letters. 13:5931-5937 |
| ISSN: | 1530-6992 1530-6984 |
| Popis: | Monolithic integration of III-V optoelectronic devices with materials for various functionalities inexpensively is always desirable. Polysilicon (poly-Si) is an ideal platform because it is dopable and semiconducting, and can be deposited and patterned easily on a wide range of low cost substrates. However, the lack of crystalline coherency in poly-Si poses an immense challenge for high-quality epitaxial growth. In this work, we demonstrate, for the first time, direct growth of micrometer-sized InGaAs/GaAs nanopillars on polysilicon. Transmission electron microscopy shows that the micrometer-sized pillars are single-crystalline with pure wurzite-phase, far exceeding the substrate crystal grain size ~100 nm. The high quality growth is enabled by the unique tapering geometry at the base of the nanostructure, which reduces the effective InGaAs/Si contact area to40 nm in diameter. The small footprint not only reduces stress due to lattice mismatch but also prevents the nanopillar from nucleating on multiple Si crystal grains. This relaxes the grain size requirement for poly-Si, potentially reducing the cost for poly-Si deposition. Lasing is achieved in the as-grown pillars under optical pumping, attesting their excellent crystalline and optical quality. These promising results open up a pathway for low-cost synergy of optoelectronics with other technologies such as CMOS integrated circuits, sensing, nanofluidics, thin film transistor display, photovoltaics, and so forth. |
| Databáze: | OpenAIRE |
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