Strain-engineered metal-to-insulator transition and orbital polarization in nickelate superlattices integrated on silicon

Autor: Zoran Jovanovic, Felix Eltes, Gertjan Koster, Ufuk Halisdemir, Johan Verbeeck, Binbin Chen, Manuel Bibes, Guus Rijnders, J. Belhadi, Jin Hong Lee, Daen Jannis, Mark Huijben, Stefan Abel, Matjaž Spreitzer, Nicolas Gauquelin, Daniel M. Cunha, Jean Fompeyrine, Cinthia Piamonteze
Přispěvatelé: Unité mixte de physique CNRS/Thales (UMPhy CNRS/THALES), Centre National de la Recherche Scientifique (CNRS)-THALES, Inorganic Materials Science, THALES-Centre National de la Recherche Scientifique (CNRS)
Jazyk: angličtina
Rok vydání: 2020
Předmět:
Materials science
metal-to-insulator transition
Silicon
insulator transition
Superlattice
Oxide
UT-Hybrid-D
chemistry.chemical_element
02 engineering and technology
010402 general chemistry
Epitaxy
01 natural sciences
[SPI.MAT]Engineering Sciences [physics]/Materials
chemistry.chemical_compound
Strain engineering
strain
General Materials Science
nickelate superlattices
ComputingMilieux_MISCELLANEOUS
business.industry
Mechanical Engineering
Transition temperature
Physics
silicon
021001 nanoscience & nanotechnology
orbital polarization
0104 chemical sciences
to‐
Chemistry
Semiconductor
chemistry
Mechanics of Materials
Optoelectronics
metal‐
[PHYS.COND.CM-SCE]Physics [physics]/Condensed Matter [cond-mat]/Strongly Correlated Electrons [cond-mat.str-el]
0210 nano-technology
business
Single crystal
Engineering sciences. Technology
Zdroj: Advanced materials
Advanced Materials
Advanced Materials, Wiley-VCH Verlag, 2020, pp.2004995. ⟨10.1002/adma.202004995⟩
Advanced materials, 32(50):2004995. Wiley-Blackwell
ISSN: 0935-9648
1521-4095
Popis: Epitaxial growth of SrTiO3 (STO) on silicon greatly accelerates the monolithic integration of multifunctional oxides into the mainstream semiconductor electronics. However, oxide superlattices (SLs), the birthplace of many exciting discoveries, remain largely unexplored on silicon. In this work, LaNiO3/LaFeO3 SLs are synthesized on STO-buffered silicon (Si/STO) and STO single-crystal substrates, and their electronic properties are compared using dc transport and X-ray absorption spectroscopy. Both sets of SLs show a similar thickness-driven metal-to-insulator transition, albeit with resistivity and transition temperature modified by the different amounts of strain. In particular, the large tensile strain promotes a pronounced Ni (Formula presented.) orbital polarization for the SL grown on Si/STO, comparable to that reported for LaNiO3 SL epitaxially strained to DyScO3 substrate. Those results illustrate the ability to integrate oxide SLs on silicon with structure and property approaching their counterparts grown on STO single crystal, and also open up new prospects of strain engineering in functional oxides based on the Si platform. © 2020 The Authors. Advanced Materials published by Wiley-VCH GmbH
Databáze: OpenAIRE
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