MOS-FET as a Current Sensor in Power Electronics Converters
| Autor: | Miran Rodiĉ, Rok Pajer, Branko Premzel, Miro Milanoviĉ |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2015 |
| Předmět: |
current measurement
udc:681.5 Computer science Hardware_PERFORMANCEANDRELIABILITY lcsh:Chemical technology Biochemistry Article Analytical Chemistry Power electronics Electronic engineering Hardware_INTEGRATEDCIRCUITS converters lcsh:TP1-1185 Current sensor Electronics Electrical and Electronic Engineering Instrumentation Electrical conductor business.industry močnostna elektronika Electrical engineering Electrical element thermal model converter Atomic and Molecular Physics and Optics Analog signal power electronics MOS-FET Hall effect sensor Field-effect transistor pretvorniki tekoče meritve business Shunt (electrical) Voltage Hardware_LOGICDESIGN |
| Zdroj: | Sensors Volume 15 Issue 8 Pages 18061-18079 Sensors (Basel, Switzerland) Sensors, Vol 15, Iss 8, Pp 18061-18079 (2015) Sensors, vol. 15, no. 8, pp. 18061-18079, 2015. |
| ISSN: | 1424-8220 |
| DOI: | 10.3390/s150818061 |
| Popis: | This paper presents a current sensing principle appropriate for use in power electronics' converters. This current measurement principle has been developed for metal oxide semiconductor field effect transistor (MOS-FET) and is based on U(DS) voltage measurement. In practice, shunt resistors and Hall effect sensors are usually used for these purposes, but the presented principle has many advantages. There is no need for additional circuit elements within high current paths, causing parasitic inductances and increased production complexity. The temperature dependence of MOS-FETs conductive resistance R(DS-ON) is considered in order to achieve the appropriate measurement accuracy. The "MOS-FET sensor" is also accompanied by a signal acquisition electronics circuit with an appropriate frequency bandwidth. The obtained analogue signal is therefore interposed to an A-D converter for further data acquisition. In order to achieve sufficient accuracy, a temperature compensation and appropriate approximation is used (R(DS-ON) = R(DS-ON)(θj)). The MOS-FET sensor is calibrated according to a reference sensor based on the Hall-effect principle. The program algorithm is executed on 32-bit ARM M4 MCU, STM32F407. |
| Databáze: | OpenAIRE |
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