Electronic structure investigation of Al0.7Ga0.3As/GaAs nanometric heterostructures by Kelvin force microscopy
| Autor: | Thierry Melin, Sylvain Pouch, Y.-M. Niquet, Łukasz Borowik, Nicolas Chevalier, F. Triozon |
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| Přispěvatelé: | Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratory of Atomistic Simulation (LSIM ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG) |
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
Electronic structure
Materials science General Chemical Engineering Layer thickness Gallium 02 engineering and technology 01 natural sciences Atomic force microscopy Resolution limits Optics Gallium arsenide 0103 physical sciences Microscopy Semiconducting gallium Nano-meter scale Self-consistent simulations 010306 general physics Electronic band structure Depletion layer Kelvin probe force microscope [PHYS]Physics [physics] business.industry Surface potential Heterojunction General Chemistry Conductive atomic force microscopy 021001 nanoscience & nanotechnology Spatially resolved Band bending Optoelectronics Intrinsic property 0210 nano-technology business Non-contact atomic force microscopy Photoconductive atomic force microscopy Kelvin force microscopy Aluminum |
| Zdroj: | RSC Advances RSC Advances, Royal Society of Chemistry, 2016, 6 (8), pp.6782-6787. ⟨10.1039/c5ra24505b⟩ RSC Advances, 2016, 6 (8), pp.6782-6787. ⟨10.1039/c5ra24505b⟩ |
| ISSN: | 2046-2069 |
| DOI: | 10.1039/c5ra24505b⟩ |
| Popis: | International audience; Kelvin force microscopy provides a spatially resolved measurement of the surface potential, which is related to the energetic band structure of a material. The goal of this work is to investigate the surface potential on Al0.7Ga0.3As and GaAs heterostructures with a decreasing layer thickness up to a few nanometers. We show that all the Kelvin force microscopy measurements on such a structure show a decreasing contrast relative to the layer thickness which remains the same despite the fact that measurements are done with various atomic force microscopy tip apexes. We prove that this contrast limitation is not due to the resolution limit of the Kelvin force microscopy technique, but is due to an intrinsic property of the sample. We evaluate by a self-consistent simulation, that the depletion layers located at the Al0.7Ga0.3As and GaAs interfaces of the narrowest stripes recover each other, which results in the partial or total loss of the contrast between Al0.7Ga0.3As and GaAs layers. Consequently, by Kelvin force microscopy we are able to detect the surface potential signal in the nanometer scale which is induced by the band bending between Al0.7Ga0.3As and GaAs and does not depend only on the experimental setup. |
| Databáze: | OpenAIRE |
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