Charge Carrier Transport and Deep Levels Recharge in Avalanche S-Diodes Based on GaAs
| Autor: | I. A. Prudaev, O. P. Tolbanov, M. G. Verkholetov, A. D. Koroleva |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) перезарядка глубоких уровней Physics::Instrumentation and Detectors business.industry лавинные S-диоды 02 engineering and technology Semiconductor device 021001 nanoscience & nanotechnology 01 natural sciences Molecular physics уравнение непрерывности Avalanche breakdown Ion Condensed Matter::Materials Science Semiconductor Electrical resistivity and conductivity 0103 physical sciences транспорт носителей заряда Charge carrier Diffusion (business) 0210 nano-technology business Diode |
| Zdroj: | Technical physics letters. 2018. Vol. 44, № 6. P. 465-468 |
| ISSN: | 1090-6533 1063-7850 |
| DOI: | 10.1134/s106378501806007x |
| Popis: | Carrier transport and deep-level recharging in semiconductor avalanche S-diode structures have been investigated. Gallium-arsenide n+–π–ν–n structures with the diffusion distribution of deep iron acceptors have been studied. It has been found by solving the continuity and Poisson equations with the use of a commercial software that the electron injection affects the avalanche breakdown voltage and the spacecharge region broadens due to capture of avalanche holes on negative iron ions in the π-region. It is demonstrated by comparing the results of numerical calculation with the experimental data that the S-shaped I–V characteristic of the diffusion avalanche S-diodes cannot be explained within the previously proposed mechanism of capture of avalanche holes on the deep iron levels. |
| Databáze: | OpenAIRE |
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