Surface modification of silicon wafer by low-pressure high-frequency plasma chemical vapor deposition method

Autor:	Narong Mungkung, H. Kataoka, Kenichi Nakabayashi, M. Kawano, N. Kashihara, T. Bouno, Yoshifumi Suzaki, Yuichi Kiyota, K. Sakai, Toshifumi Yuji, D. Uesugi, Hiroshi Akatsuka, H. Shibata
Rok vydání:	2010
Předmět:	Contact angle Materials science X-ray photoelectron spectroscopy Silicon chemistry Plasma-enhanced chemical vapor deposition technology industry and agriculture Analytical chemistry Surface modification chemistry.chemical_element Wafer Chemical vapor deposition Plasma processing
Zdroj:	24th ISDEIV 2010.
DOI:	10.1109/deiv.2010.5625758
Popis:	The writers are developing the production process device of thin-film material for the flexible solar cells using the high-frequency plasma chemical vapor deposition (CVD) method. In order to clarify the characteristics of the device, plasma treatment is applied on the Si wafer surface and basic characteristic of plasma is found by the analysis of the B doped p-type (100) Si wafer surface using X-ray photoelectron spectroscopy (XPS) and contact angle measuring gauge.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4a0ad63d125e68e3ca8643d1dcf4f456 https://doi.org/10.1109/deiv.2010.5625758 Zobrazit plný text záznamu