Nanoimaging of Organic Charge Retention Effects: Implications for Nonvolatile Memory, Neuromorphic Computing, and High Dielectric Breakdown Devices
| Autor: | Lin-Wang Wang, Yves J. Chabal, Javier Fernández Sanz, Miquel Salmeron, Jun Kang, Louis Caillard, Olivier Pluchery, Yingjie Zhang |
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| Přispěvatelé: | Universidad de Sevilla. Departamento de Química Física, Department of Energy. United States, National Science Foundation (NSF). United States |
| Rok vydání: | 2019 |
| Předmět: |
polaron
Materials science Dielectric strength Silicon nonvolatile memory nanoparticle chemistry.chemical_element Nanotechnology Substrate (electronics) Polaron Kelvin probe force microscopy Electrical contacts Non-volatile memory organic monolayer Neuromorphic engineering chemistry Monolayer General Materials Science charge retention density functional theory |
| Zdroj: | ACS Applied Nano Materials, vol 2, iss 8 idUS. Depósito de Investigación de la Universidad de Sevilla instname |
| Popis: | While a large variety of organic and molecular materials have been found to exhibit charge memory effects, the underlying mechanism is not well-understood, which hinders rational device design. Here, we study the charge retention mechanism of a nanoscale memory system, an organic monolayer on a silicon substrate, with Au nanoparticles on top serving as the electrical contact. Combining scanning probe imaging/manipulation and density functional simulations, we observe stable charge retention effects in the system and attributed it to polaron effects at the amine functional groups. Our findings can pave the way for applications in nonvolatile memory, neuromorphic computing, and high dielectric breakdown devices. U.S. Department of Energy DE-AC02-05CH11231 U.S. National Science Foundation CHE-1300180 Marie Curie FP7 ILSES 612620 Nanotwinning FP7 NN294952 |
| Databáze: | OpenAIRE |
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