Silver Sintering for Silicon Carbide Die Attach: Process Optimization and Structural Modeling
| Autor: | Gaetano Sequenzia, Alessandro Sitta, Michele Calabretta, Salvatore Massimo Oliveri |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
mechanical characterization
Technology Materials science Silicon QH301-705.5 silver sintering QC1-999 Sintering chemistry.chemical_element finite element analysis 02 engineering and technology physical analyses Die (integrated circuit) chemistry.chemical_compound Reliability (semiconductor) 0202 electrical engineering electronic engineering information engineering Silicon carbide General Materials Science Process optimization Power semiconductor device Biology (General) Composite material QD1-999 Instrumentation Fluid Flow and Transfer Processes reliability Physics Process Chemistry and Technology General Engineering 020207 software engineering Engineering (General). Civil engineering (General) 021001 nanoscience & nanotechnology Durability Computer Science Applications Chemistry chemistry TA1-2040 0210 nano-technology |
| Zdroj: | Applied Sciences Volume 11 Issue 15 Applied Sciences, Vol 11, Iss 7012, p 7012 (2021) |
| ISSN: | 2076-3417 |
| Popis: | The increasing demand in automotive markets is leading the semiconductor industries to develop high-performance and highly reliable power devices. Silicon carbide MOSFET chips are replacing silicon-based solutions through their improved electric and thermal capabilities. In order to support the development of these novel semiconductors, packaging technologies are evolving to provide enough reliable products. Silver sintering is one of the most promising technologies for die attach. Due to their superior reliability properties with respect to conventional soft solder compounds, dedicated reliability flow and physical analyses should be designed and employed for sintering process optimization and durability assessment. This paper proposes an experimental methodology to optimize the pressure value applied during the silver sintering manufacturing of a silicon carbide power MOSFET molded package. The evaluation of the best pressure value is based on scanning electron microscopy performed after a liquid-to-liquid thermal shock reliability test. Furthermore, the sintering layer degradation is monitored during durability stress by scanning the acoustic microscopy and electric measurement of a temperature sensitive electric parameter. Moreover, mechanical elastoplastic behavior is characterized by uniaxial tensile test for a bulk sample and finite element analysis is developed to predict the mechanical behavior as a function of void fraction inside sintering layer. |
| Databáze: | OpenAIRE |
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