Surface and near surface structure and composition of high-dose implanted and electron beam annealed single crystal copper
Autor: | V.P. Rotstein, V.I. Lavrentiev, A.V. Markov, D.I. Proskurovsky, A.D. Mikhaliov, Yu. F. Ivanov, V.V. Stayko, S. M. Duvanov, Alexander D. Pogrebnjak |
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Předmět: |
Materials science
Scanning electron microscope Analytical chemistry Mineralogy Surfaces and Interfaces General Chemistry Condensed Matter Physics Surfaces Coatings and Films Carbide Carbon film Amorphous carbon Transmission electron microscopy Materials Chemistry Substructure Crystallite Single crystal |
Zdroj: | Scopus-Elsevier CIÊNCIAVITAE |
Popis: | Cu(111),(100) single crystals implanted with Ti up to 8 × 10 17 cm −2 followed by high-current electron beam annealing (HCEB) have been investigated by means of transmission electron microscopy (TEM), Rutherford back-scattering (RBS), nuclear reaction elastic resonance (NRER) and scanning electron microscopy (SEM). Ti, O, C concentration profile behaviour in Cu single crystals has been studied. Cu layer structure after Ti implantation became multi-component. It was found that this layer included a surface amorphous carbon film, a layer consisting of TiC, a layer consisting of (110)CuTi/(111)TiC and a subsequent Cu single crystal possessing subgrains of 170–180 nm. A small-angle disorientation up to 5 ° between the subgrains was observed. As a result of HCEB irradiation, a portion of carbon film evaporated, and Ti carbide dispersed to 2–4 nm. The Cu structure essentially changed. The Cu layer contacting the carbide became a nano-dimensional substructure with an average crystallite size of 50–70 nm. At a depth of 0.1 μm the Cu structure is represented as a disoriented striped substructure: the discrete disorientation between the stripes was about 6–7 °. Net dislocation substructure was observed inside the stripes, the dislocation scalar density of which was γ > = 5.2 × 10 10 cm −2 . |
Databáze: | OpenAIRE |
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