Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes Under Heavy Ion Irradiation
| Autor: | Ketil Roed, Dag Oistein Eriksen, Bruno Ceccaroli, Corinna Martinella, Arto Javanainen, Sergey Reshanov, Silvia Massetti |
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| Jazyk: | angličtina |
| Rok vydání: | 2022 |
| Předmět: |
Nuclear and High Energy Physics
ionisoiva säteily Schottky diodes heavy ion irradiation leakage current degradation single event effects elektroniikkakomponentit säteilyfysiikka Nuclear Energy and Engineering silicon carbide monoisotopic puolijohteet diodit Electrical and Electronic Engineering Detectors and Experimental Techniques single event burnout |
| ISSN: | 0018-9499 |
| Popis: | The radiation tolerance of isotopic enriched and natural silicon carbide junction barrier Schottky diodes are compared under heavy ion irradiation. Both types of devices experience leakage current degradation as well as single-event burnout events. The results were comparable, although the data may indicate a marginally lower thresholds for the isotopic enriched devices at lower linear energy transfer (LET). Slightly higher reverse bias threshold values for leakage current degradation were also observed compared to previously published work. |
| Databáze: | OpenAIRE |
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