Electrical and Structural Characterization of Germanium Nanowires
Autor: | A. J. Chiquito, Olivia M. Berengue, Luana S. Araujo, H. Kamimura |
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Rok vydání: | 2012 |
Předmět: |
Materials science
business.industry Nanowire chemistry.chemical_element Germanium Nanotechnology Atmospheric temperature range Physics and Astronomy(all) Variable-range hopping chemical vapor deposition hopping germanium symbols.namesake Semiconductor nanowires chemistry symbols Optoelectronics eletronic transport Vapor–liquid–solid method business Field emission gun Raman spectroscopy |
Zdroj: | Physics Procedia. 28:62-66 |
ISSN: | 1875-3892 |
DOI: | 10.1016/j.phpro.2012.03.672 |
Popis: | Germanium nanowires were grown by thermal evaporation of germanium powder associated with the well known vapor-liquid-solid mechanism (VLS). The nanowires were investigated by x-ray diffraction (XRD), Raman spectroscopy and field emission gun scanning electron microscopy (FEG-SEM). Through the fabrication of a germanium nanowires-based device we have studied the electronic transport properties of these samples. The transport measurements revealed semiconductor – like features, characterized by the decrease of the resistance as the temperature decreases. The variable range hopping (VRH) was identified as the main transport mechanism in a large temperature range (77K < T < 400K) thus giving consistent support to the mechanisms underlying the observed semiconducting character. |
Databáze: | OpenAIRE |
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