Laser Thinning for Monolayer Graphene Formation: Heat Sink and Interference Effect
| Autor: | Eun Sung Kim, Seong Chu Lim, Seung Jin Chae, Il Ha Lee, Young Hee Lee, Fethullah Güneş, Gang Hee Han, Sang Won Lee, Hae Kyung Jeong, Mun Seok Jeong, Si Young Lee |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
business.industry Graphene Graphene foam General Engineering General Physics and Astronomy Nanotechnology Chemical vapor deposition Substrate (electronics) law.invention symbols.namesake law Monolayer symbols Optoelectronics General Materials Science business Raman spectroscopy Graphene nanoribbons Graphene oxide paper |
| Zdroj: | ACS Nano. 5:263-268 |
| ISSN: | 1936-086X 1936-0851 |
| DOI: | 10.1021/nn1026438 |
| Popis: | Despite the availability of large-area graphene synthesized by chemical vapor deposition (CVD), the control of a uniform monolayer graphene remained challenging. Here, we report a method of acquiring monolayer graphene by laser irradiation. The accumulation of heat on graphene by absorbing light, followed by oxidative burning of upper graphene layers, which strongly relies on the wavelength of light and optical parameters of the substrate, was in situ measured by the G-band shift in Raman spectroscopy. The substrate plays a crucial role as a heat sink for the bottom monolayer graphene, resulting in no burning or etching. Oscillatory thinning behavior dependent on the substrate oxide thickness was evaluated by adopting a simple Fresnel's equation. This paves the way for future research in utilizing monolayer graphene for high-speed electronic devices. |
| Databáze: | OpenAIRE |
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