Defect characterization of unannealed neutron transmutation doped silicon by means of deep temperature microwave detected photo induced current transient spectroscopy
| Autor: | Ignaz Eisele, C. R. Engst, Christoph Kutter |
|---|---|
| Přispěvatelé: | Publica |
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Silicon Doping General Physics and Astronomy chemistry.chemical_element 02 engineering and technology Carrier lifetime Atmospheric temperature range 021001 nanoscience & nanotechnology 01 natural sciences Molecular physics chemistry Electrical resistivity and conductivity 0103 physical sciences Neutron 0210 nano-technology Spectroscopy Ohmic contact |
| Popis: | Unannealed neutron transmutation doped silicon substrates with a target resistivity of approximately 1000 Ω cm are characterized for radiation induced defects by means of microwave detected photoinduced current transient spectroscopy (MD-PICTS). This technique is a contactless advancement of conventional PICTS and does not require the fabrication of ohmic contacts. Defect spectroscopy by means of MD-PICTS is conducted in a broad temperature range between 30 K and 293 K, which makes it possible to identify energetically shallow as well as deep traps. In addition, a wavelength dependent analysis is performed to determine whether a defect is located at the surface or in the bulk material. Three traps with an average activation energy of 68 meV, 85 meV, and 150 meV are observed. In addition, an indication for deep defect states with activation energies between 320 meV and 480 meV is found. According to the wavelength dependent analysis, it is assumed that all observed traps are bulk defects. Finally, a minority carrier lifetime of approximately 0.7 μs is determined, suggesting that the crystal is heavily damaged by neutron radiation.Unannealed neutron transmutation doped silicon substrates with a target resistivity of approximately 1000 Ω cm are characterized for radiation induced defects by means of microwave detected photoinduced current transient spectroscopy (MD-PICTS). This technique is a contactless advancement of conventional PICTS and does not require the fabrication of ohmic contacts. Defect spectroscopy by means of MD-PICTS is conducted in a broad temperature range between 30 K and 293 K, which makes it possible to identify energetically shallow as well as deep traps. In addition, a wavelength dependent analysis is performed to determine whether a defect is located at the surface or in the bulk material. Three traps with an average activation energy of 68 meV, 85 meV, and 150 meV are observed. In addition, an indication for deep defect states with activation energies between 320 meV and 480 meV is found. According to the wavelength dependent analysis, it is assumed that all observed traps are bulk... |
| Databáze: | OpenAIRE |
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