Full Hydrodynamic Simulation of GaAs MESFETs
| Autor: | Rüdiger Vahldieck, Andreas Aste, Marcel Rohner |
|---|---|
| Rok vydání: | 2004 |
| Předmět: |
Discretization
media_common.quotation_subject FOS: Physical sciences 02 engineering and technology Inertia 01 natural sciences Electric field 0103 physical sciences Electrical and Electronic Engineering media_common 010302 applied physics Physics Partial differential equation Finite difference Fluid Dynamics (physics.flu-dyn) Mechanics Physics - Fluid Dynamics Computational Physics (physics.comp-ph) 021001 nanoscience & nanotechnology Computer Science Applications Modeling and Simulation MESFET Charge carrier Transient (oscillation) 0210 nano-technology Physics - Computational Physics |
| DOI: | 10.48550/arxiv.physics/0402098 |
| Popis: | A finite difference upwind discretization scheme in two dimensions is presented in detail for the transient simulation of the highly coupled non-linear partial differential equations of the full hydrodynamic model, providing thereby a practical engineering tool for improved charge carrier transport simulations at high electric fields and frequencies. The discretization scheme preserves the conservation and transportive properties of the equations. The hydrodynamic model is able to describe inertia effects which play an increasing role in different fields of micro- and optoelectronics, where simplified charge transport models like the drift-diffusion model and the energy balance model are no longer applicable. Results of extensive numerical simulations are shown for a two-dimensional MESFET device. A comparison of the hydrodynamic model to the commonly used energy balance model is given and the accuracy of the results is discussed. Comment: 18 pages, LATEX |
| Databáze: | OpenAIRE |
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