Double Negative Differential Resistance Device Based on Hafnium Disulfide/Pentacene Hybrid Structure
| Autor: | Jin-Hong Park, Keun Heo, Jeong Ho Cho, Maksim Andreev, Min Je Kim, Sungho Kim, Geun Yong Yeom, Ki Seok Kim, Jin Ok Kim, Kwan-Ho Kim, Ji Hye Lim, Kil Su Jung, Seunghwan Seo |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
General Chemical Engineering General Physics and Astronomy Medicine (miscellaneous) chemistry.chemical_element 02 engineering and technology 010402 general chemistry 01 natural sciences Biochemistry Genetics and Molecular Biology (miscellaneous) law.invention Pentacene symbols.namesake chemistry.chemical_compound HfS2 law General Materials Science lcsh:Science Quantum tunnelling Full Paper business.industry Transistor General Engineering Dangling bond Heterojunction negative differential resistance (NDR) pentacene Full Papers 021001 nanoscience & nanotechnology 0104 chemical sciences Hafnium chemistry symbols Optoelectronics lcsh:Q Resistor van der Waals force 0210 nano-technology business hybrid structures |
| Zdroj: | Advanced Science Advanced Science, Vol 7, Iss 19, Pp n/a-n/a (2020) |
| ISSN: | 2198-3844 |
| Popis: | Recently, combinations of 2D van der Waals (2D vdW) materials and organic materials have attracted attention because they facilitate the formation of various heterojunctions with excellent interface quality owing to the absence of dangling bonds on their surface. In this work, a double negative differential resistance (D‐NDR) characteristic of a hybrid 2D vdW/organic tunneling device consisting of a hafnium disulfide/pentacene heterojunction and a 3D pentacene resistor is reported. This D‐NDR phenomenon is achieved by precisely controlling an NDR peak voltage with the pentacene resistor and then integrating two distinct NDR devices in parallel. Then, the operation of a controllable‐gain amplifier configured with the D‐NDR device and an n‐channel transistor is demonstrated using the Cadence Spectre simulation platform. The proposed D‐NDR device technology based on a hybrid 2D vdW/organic heterostructure provides a scientific foundation for various circuit applications that require the NDR phenomenon. In this work, a double negative differential resistance (D‐NDR) characteristic of a hybrid 2D van der Waals (2D vdW)/organic tunneling device consisting of a hafnium disulfide/pentacene heterojunction and a 3D pentacene resistor is reported. Then the operation of a controllable‐gain amplifier configured with the D‐NDR device and an n‐channel transistor is demonstrated using the Cadence Spectre simulation platform. |
| Databáze: | OpenAIRE |
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