Electrical model of an inverter body-biased structure in triple-well technology under pulsed photoelectric laser stimulation
| Autor: | Jean-Max Dutertre, Nicolas Borrel, Edith Kussener, Wenceslas Rahajandraibe, Mathieu Lisart, Alexandre Sarafianos, Clement Champeix |
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| Přispěvatelé: | Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), STMicroelectronics [Crolles] (ST-CROLLES), Département Systèmes et Architectures Sécurisés (SAS-ENSMSE), École des Mines de Saint-Étienne (Mines Saint-Étienne MSE), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT)-CMP-GC |
| Jazyk: | angličtina |
| Rok vydání: | 2015 |
| Předmět: |
Engineering
02 engineering and technology Integrated circuit 01 natural sciences law.invention [SPI]Engineering Sciences [physics] law 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Electronic engineering Electronics Electrical and Electronic Engineering [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics Safety Risk Reliability and Quality ComputingMilieux_MISCELLANEOUS Electronic circuit 010302 applied physics business.industry 020208 electrical & electronic engineering Bipolar junction transistor Photoelectric laser stimulation Biasing Condensed Matter Physics Laser Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Thermal laser stimulation Inverter Optoelectronics business Single Event Effect |
| Zdroj: | Microelectronics Reliability Microelectronics Reliability, Elsevier, 2015, 55 (9-10), pp.1592-1599. ⟨10.1016/j.microrel.2015.06.144⟩ Microelectronics Reliability, 2015, 55 (9-10), pp.1592-1599. ⟨10.1016/j.microrel.2015.06.144⟩ |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/j.microrel.2015.06.144⟩ |
| Popis: | International audience; This study is driven by the need to optimize reliability and failure analysis methodologies based on laser/silicon interactions with an integrated circuit using a triple-well process. Nowadays, single event effect (SEE) evaluations due to radiation impacts are critical in fault tolerance and security field. The prediction of a SEE occurring on electronic devices is proposed by the determination and modeling of the phenomena under pulsed laser stimulation. This paper presents measurements of the photoelectric currents induced by a pulsed-laser on an inverter in a triple-well Psubstrate/DeepNwell/Pwell structure dedicated to low power body biasing techniques. It reveals the possible activation change of the parasitic bipolar transistors. Based on these experimental mea- surements, an electrical model is proposed that makes it possible to simulate the effects induced by photoelectric laser stimulation. Therefore this electrical model could be used as a tool for characterizing more complex CMOS circuits under photoelectrical laser stimulation. |
| Databáze: | OpenAIRE |
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