Indium phosphide based membrane photodetector for optical interconnects on silicon

Autor:	J. Van Campenhout, T. de Vries, L. Di Cioccio, Oded Raz, MK Meint Smit, Regis Orobtchouk, P.J. van Veldhoven, C Lagahe, P.R.A. Binetti, J-M. Fedeli, Xaveer Leijtens, D. Van Thourhout, Ys Oei, R Richard Nötzel
Přispěvatelé:	Photonic Integration, Electro-Optical Communication, Photonics and Semiconductor Nanophysics, Low Latency Interconnect Networks
Jazyk:	angličtina
Rok vydání:	2008
Předmět:	Fabrication Materials science business.industry Detector Photodetector Silicon on insulator Hardware_PERFORMANCEANDRELIABILITY chemistry.chemical_compound Die preparation chemistry Indium phosphide Hardware_INTEGRATEDCIRCUITS Optoelectronics Wafer Photonics business
Zdroj:	Proceedings of the 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS 2008), 9-13 November 2008, Newport Beach, California USA, 302-303 STARTPAGE=302;ENDPAGE=303;TITLE=Proceedings of the 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS 2008), 9-13 November 2008, Newport Beach, California USA LEOS 2008. 2008 IEEE LEOS Annual Meeting Conference Proceedings
Popis:	We have designed, fabricated and characterized an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. New results on RF characterization up to 20 GHz are presented. The detector fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::48d833bef67b4d39b8f268cead6da789 https://research.tue.nl/nl/publications/8335c7f2-0f0a-4e97-b4fb-c81cb6b40830 Zobrazit plný text záznamu