Industrial Process Leading to 19.8% on N-Type Cz Silicon

Autor:	P.-J. Ribeyron, Yannick Veschetti, B. Novel, Bettinelli, S. Manuel, C. Gillot, F. Ozanne, Cabal, F. Barbier, S. Gall, V. Sanzone
Rok vydání:	2013
Předmět:	Materials science Passivation business.industry Boron diffusion Solar cell Substrate (electronics) law.invention n-type silicon Energy(all) law Thermal Electronic engineering Optoelectronics Degradation (geology) Wafer Diffusion (business) business High efficiency Common emitter
Zdroj:	Energy Procedia. 33:11-17
ISSN:	1876-6102
DOI:	10.1016/j.egypro.2013.05.034
Popis:	High efficiencies have been demonstrated on n-type solar cells thanks to advanced passivation layers and metallisation techniques. In this paper we present the latest results obtained with our bifacial cell structure, using BCl3 diffusion for emitter formation, thermal SiO2 passivation and screen-printing metallisation. By continuously improving front side contact quality and reducing substrate bulk lifetime degradation we were able to steadily increase the efficiency of our solar cells from 18.8% to 19.8% on large area c-Si wafers. A first PV module of 21 cells exhibiting an output power of 92 Wp was fabricated.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::48ba1f77528598afe811a0ca051fa20f https://doi.org/10.1016/j.egypro.2013.05.034 Zobrazit plný text záznamu