Effect of Etching Time on Optical and Thermal Properties of p-Type Porous Silicon Prepared by Electrical Anodisation Method
| Autor: | Kasra Behzad, Esmaeil Shahriari, Afarin Bahrami, Zainal Abidin Talib, Wan Mahmood Mat Yunus, Azmi Zakaria |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
Photoluminescence Article Subject Silicon Band gap Analytical chemistry chemistry.chemical_element Porous silicon Thermal diffusivity Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials chemistry Etching (microfabrication) Wafer Photoacoustic spectroscopy |
| Zdroj: | Advances in Optical Technologies. 2012:1-9 |
| ISSN: | 1687-6407 1687-6393 |
| DOI: | 10.1155/2012/581743 |
| Popis: | The porous silicon (PSi) layers were formed on p-type silicon (Si) wafer. The six samples were anodised electrically with 30 mA/cm2 fixed current density for different etching times. The structural, optical, and thermal properties of porous silicon on silicon substrates were investigated by photoluminescence (PL), photoacoustic spectroscopy (PAS), and UV-Vis-NIR spectrophotometer. The thickness and porosity of the layers were measured using the gravimetric method. The band gap of the samples was measured through the photoluminescence (PL) peak and absorption spectra, then they were compared. It shows that band gap value increases by raising the porosity. Photoacoustic spectroscopy (PAS) was carried out for measuring the thermal diffusivity (TD) of the samples. |
| Databáze: | OpenAIRE |
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