Nanoparticle Embedded p-Type Electrodes for GaN-Based Flip-Chip Light Emitting Diodes
| Autor: | C. Sone, Tae Yeon Seong, June O. Song, Joon Seop Kwak, Byung-Il Kim, Park Yushin, Jaehee Cho |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Materials science
Indium nitride business.industry Contact resistance Biomedical Engineering Bioengineering Gallium nitride Biasing General Chemistry Condensed Matter Physics law.invention chemistry.chemical_compound chemistry law Electrode Optoelectronics General Materials Science business Ohmic contact Flip chip Light-emitting diode |
| Zdroj: | Journal of Nanoscience and Nanotechnology. 6:3547-3550 |
| ISSN: | 1533-4880 |
| DOI: | 10.1166/jnn.2006.053 |
| Popis: | We have investigated high-quality ohmic contacts for flip-chip light emitting diodes using Zn–Ni nanoparticles/Ag schemes. The Zn–Ni nanoparticles/Ag contacts produce specific contact resistances of 10−5–10−6 Ωcm2 when annealed at temperatures of 330–530 °C for 1 min in air ambient, which are much better than those obtained from the Ag contacts. It is shown that blue InGaN/GaN multi-quantum well light emitting diodes fabricated with the annealed Zn–Ni nanoparticles/Ag contacts give much lower forward-bias voltages at 20 mA compared with those of the multi-quantum well light emitting diodes made with the as-deposited Ag contacts. It is further presented that the multi-quantum well light emitting diodes made with the Zn–Ni nanoparticles/Ag contacts show similar output power compared to those fabricated with the Ag contact layers. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|