Temperature-dependent absorption edge and photoconductivity of Tl2In2S3Se layered single crystals
| Autor: | Teresa Ligonzo, Isikhan Guler, Nizami Gasanly, M. Ambrico |
|---|---|
| Rok vydání: | 2013 |
| Předmět: |
Materials science
business.industry Mechanical Engineering Photoconductivity Fermi level Metals and Alloys Analytical chemistry Conductivity Atmospheric temperature range symbols.namesake Absorption edge Mechanics of Materials Materials Chemistry symbols Optoelectronics Direct and indirect band gaps Absorption (electromagnetic radiation) business Temperature coefficient |
| Zdroj: | Journal of alloys and compounds (2012). doi:10.1016/j.jallcom.2012.10.133 info:cnr-pdr/source/autori:I. Guler a, M. Ambrico b, T. Ligonzo c, N.M. Gasanly d/titolo:Temperature-Dependent Absorption Edge and Photoconductivity of Tl2In2S3Se Layered Single Crystals/doi:10.1016%2Fj.jallcom.2012.10.133/rivista:Journal of alloys and compounds/anno:2012/pagina_da:/pagina_a:/intervallo_pagine:/volume |
| ISSN: | 0925-8388 |
| Popis: | Temperature variation of indirect band gap of Tl 2 In 2 S 3 Se layered single crystals were obtained by means of absorption and photoconductivity measurements. The temperature coefficient of −7.1 × 10 −4 eV/K from absorption measurements in the temperature range of 10–300 K in the wavelength range of 520–1100 nm and −5.0 × 10 −4 eV/K from PC measurements in the temperature range of 132–291 K in the wavelength range of 443–620 nm upon supplying voltage V = 80 V were obtained. From the analysis of dark conductivity measurements in the temperature range of 150–300 K, conductivity activation energy was obtained as 0.51 eV above 242 K. The degree of the disorder, the density of localized states near Fermi level, the average hopping distance and average hopping energy of Tl 2 In 2 S 3 Se crystals were found as, 1.9 × 10 5 K, N f = 4 × 10 20 cm −3 eV −1 , 29.1 A and 24.2 meV in the temperature range of 171–237 K, respectively. Activation energy of hopping conductivity at T = 171 K was obtained as 41.3 meV and the concentration of trapping states was found as 1.6 × 10 19 cm −3 . |
| Databáze: | OpenAIRE |
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