A Roadmap for Controlled and Efficient n-Type Doping of Self-Assisted GaAs Nanowires Grown by Molecular Beam Epitaxy
| Autor: | Marta Orrù, Alfonso Franciosi, Yossi Rosenwaks, Alex Henning, Stefano Roddaro, Eva Repiso, Stefania Carapezzi, Silvia Rubini, Anna Cavallini, Faustino Martelli |
|---|---|
| Přispěvatelé: | Orrù, Marta, Repiso, Eva, Carapezzi, Stefania, Henning, Alex, Roddaro, Stefano, Franciosi, Alfonso, Rosenwaks, Yossi, Cavallini, Anna, Martelli, Faustino, Rubini, Silvia |
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
Electron mobility
Materials science Photoluminescence Silicon Orders of magnitude (temperature) Nanowire chemistry.chemical_element FOS: Physical sciences 02 engineering and technology doping 01 natural sciences Biomaterials Condensed Matter::Materials Science 0103 physical sciences Mesoscale and Nanoscale Physics (cond-mat.mes-hall) Electronic Electrochemistry Carrier density semiconductor nanowires Optical and Magnetic Materials PROBE FORCE MICROSCOPY HIGH-ELECTRON-MOBILITY CORE-SHELL NANOWIRES HETEROSTRUCTURES 010302 applied physics Kelvin probe force microscope Condensed Matter - Materials Science Condensed Matter - Mesoscale and Nanoscale Physics business.industry Electronic Optical and Magnetic Material Doping Materials Science (cond-mat.mtrl-sci) 021001 nanoscience & nanotechnology Condensed Matter Physics Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Electronic Optical and Magnetic Materials semiconductor nanowire chemistry Optoelectronics 0210 nano-technology business carrier density Kelvin Probe Force microscopy Molecular beam epitaxy |
| Zdroj: | Advanced functional materials (Internet) (2016): 2836–2845. doi:10.1002/adfm.201504853 info:cnr-pdr/source/autori:Orru M.; Repiso E.; Carapezzi S.; Henning A.; Roddaro S.; Franciosi A.; Rosenwaks Y.; Cavallini A.; Martelli F.; Rubini S./titolo:A Roadmap for Controlled and Efficient n-Type Doping of Self-Assisted GaAs Nanowires Grown by Molecular Beam Epitaxy/doi:10.1002%2Fadfm.201504853/rivista:Advanced functional materials (Internet)/anno:2016/pagina_da:2836/pagina_a:2845/intervallo_pagine:2836–2845/volume |
| DOI: | 10.1002/adfm.201504853 |
| Popis: | N-type doping of GaAs nanowires has proven to be difficult because the amphoteric character of silicon impurities is enhanced by the nanowire growth mechanism and growth conditions. The controllable growth of n-type GaAs nanowires with carrier density as high as 10(20) electron cm(-3) by self-assisted molecular beam epitaxy using Te donors is demonstrated here. Carrier density and electron mobility of highly doped nanowires are extracted through a combination of transport measurement and Kelvin probe force microscopy analysis in single-wire field-effect devices. Low-temperature photoluminescence is used to characterize the Te-doped nanowires over several orders of magnitude of the impurity concentration. The combined use of those techniques allows the precise definition of the growth conditions required for effective Te incorporation. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|