Magnetoresistance manipulation and sign reversal in Mn-doped ZnO nanowires
Autor: | Wenyong Wang, F. Scott Maloney, Uma Poudyal, Keshab R. Sapkota, Weimin Chen |
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Jazyk: | angličtina |
Rok vydání: | 2016 |
Předmět: |
Multidisciplinary
Materials science Colossal magnetoresistance Condensed matter physics Spintronics Magnetoresistance Zno nanowires 02 engineering and technology Conductivity 021001 nanoscience & nanotechnology Bioinformatics Polaron 01 natural sciences Article Sign reversal Modulation 0103 physical sciences 010306 general physics 0210 nano-technology |
Zdroj: | Scientific Reports |
ISSN: | 2045-2322 |
DOI: | 10.1038/srep35036 |
Popis: | We report magnetoresistance (MR) manipulation and sign reversal induced by carrier concentration modulation in Mn-doped ZnO nanowires. At low temperatures positive magnetoresistance was initially observed. When the carrier concentration was increased through the application of a gate voltage, the magnetoresistance also increased and reached a maximum value. However, further increasing the carrier concentration caused the MR to decrease, and eventually an MR sign reversal from positive to negative was observed. An MR change from a maximum positive value of 25% to a minimum negative value of 7% was observed at 5 K and 50 KOe. The observed MR behavior was modeled by considering combined effects of quantum correction to carrier conductivity and bound magnetic polarons. This work could provide important insights into the mechanisms that govern magnetotransport in dilute magnetic oxides, and it also demonstrated an effective approach to manipulating magnetoresistance in these materials that have important spintronic applications. |
Databáze: | OpenAIRE |
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