Improved performance of multilayer InAs/GaAs quantum-dot solar cells using a high-growth-temperature GaAs spacer layer
| Autor: | Huiyun Liu, Frank Tutu, M. G. Peinado, Ting Wang, Andrew A. R. Watt, Shawn M. Willis, Ian R. Sellers, C. E. Pastore |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2012 |
| Předmět: |
Threading dislocations
congenital hereditary and neonatal diseases and abnormalities Materials science Condensed Matter::Other business.industry nutritional and metabolic diseases General Physics and Astronomy Nanotechnology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect law.invention Gallium arsenide Condensed Matter::Materials Science Improved performance chemistry.chemical_compound Semiconductor quantum dots chemistry Quantum dot law Solar cell Optoelectronics business Layer (electronics) |
| Zdroj: | JOURNAL OF APPLIED PHYSICS. 111(4) |
| ISSN: | 0021-8979 |
| Popis: | The use of high-growth-temperature GaAs spacer layers is demonstrated to significantly enhance the performance of multilayer InAs/GaAs quantum-dot solar cells. Threading dislocations are observed for a 30-layer quantum-dot structure with GaAs spacer layers grown at low temperature (510°C). The formation of threading dislocations is suppressed by growing the GaAs spacer layer at high temperature (580°C), leading to enhanced quantum-dot optical and structural characteristics. Incorporation of the high-growth-temperature GaAs spacer layers into a 30-layer InAs/GaAs quantum-dot solar cell results in a dramatic increase in the short-circuit current compared to the one without the high-growth-temperature spacer layers and an increase in the short-circuit current compared to the reference GaAs solar cell. © 2012 American Institute of Physics. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|