Subcycle Nonlinear Response of Doped 4H Silicon Carbide Revealed by Two-Dimensional Terahertz Spectroscopy
| Autor: | Haiyan Ou, Peter Uhd Jepsen, Pernille Klarskov, Korbinian J. Kaltenecker, Krzysztof Iwaszczuk, Kion Norrman, Abebe Tilahun Tarekegne, Weifang Lu |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
Field (physics) Terahertz radiation Physics::Optics 02 engineering and technology terahertz spectroscopy 01 natural sciences Signal 010309 optics chemistry.chemical_compound multidimensional spectroscopy silicon carbide 0103 physical sciences Silicon carbide Electrical and Electronic Engineering business.industry Doping field-driven tunnelling 021001 nanoscience & nanotechnology Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Terahertz spectroscopy and technology Nonlinear system nonlinear response chemistry Optoelectronics 0210 nano-technology business Ultrashort pulse ultrabroadband spectroscopy Biotechnology |
| Zdroj: | Tarekegne, A T, Kaltenecker, K J, Klarskov, P, Iwaszczuk, K, Lu, W, Ou, H, Norrman, K & Jepsen, P U 2020, ' Subcycle Nonlinear Response of Doped 4 H Silicon Carbide Revealed by Two-Dimensional Terahertz Spectroscopy ', ACS Photonics, vol. 7, no. 1, pp. 221-231 . https://doi.org/10.1021/acsphotonics.9b01462 Tarekegne, A T, Kaltenecker, K J, Klarskov, P, Iwaszczuk, K, Lu, W, Ou, H, Norrman, K & Jepsen, P U 2019, ' Subcycle Nonlinear Response of Doped 4H Silicon Carbide Revealed by Two-Dimensional Terahertz Spectroscopy ', ACS Photonics, vol. 7, no. 1, pp. 221-231 . https://doi.org/10.1021/acsphotonics.9b01462 |
| ISSN: | 2330-4022 |
| DOI: | 10.1021/acsphotonics.9b01462 |
| Popis: | We investigate single-cycle terahertz (THz) field-induced nonlinear absorption in doped silicon carbide. We find that the nonlinear response is ultrafast, and we observe up to 20% reduction of transmission of single THz pulses at peak field strengths of 280 kV/cm. We model the field and temperature dependence of the nonlinear response by a finite-difference time-domain simulation that incorporates the temporally nonlocal nonlinear conductivity of the silicon carbide. Nonlinear two-dimensional THz spectroscopy reveals that the nonlinear absorption has an ultrafast subpicosecond recovery time, with contributions from both sum-frequency generation and four-wave mixing, in the form of a photon-echo signal. The ultrafast nonlinearity with its equally fast recovery time makes silicon carbide an interesting candidate material for extremely fast nonlinear THz modulators. |
| Databáze: | OpenAIRE |
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