Metastable misfit dislocations during thin-film growth: The case of Cu on Ru(0001)

Autor: Norman C. Bartelt, J. de la Figuera, Kevin F. McCarty
Přispěvatelé: Department of Energy (US), Ministerio de Economía y Competitividad (España), National Nuclear Security Administration (US)
Rok vydání: 2019
Předmět:
Zdroj: Digital.CSIC. Repositorio Institucional del CSIC
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ISSN: 0039-6028
Popis: 8 pags., 7 figs.
We have used low-energy electron microscopy (LEEM) to study how misfit dislocations evolve in the first atomic layer of Cu deposited on Ru(0001). At equilibrium the Cu islands are pseudomorphic and dislocation-free. However, the islands develop dislocation networks as they grow during deposition. These dislocations are metastable: after deposition ceases, the dislocated area shrinks as adatoms ejected from the network travel to the Cu-island edges. We analyze the dislocation decay rate and find no evidence of a significant energetic barrier for Cu adatoms to exchange with the dislocated phases. Instead, the metastable film's decay is consistent with adatom diffusion being the rate-limiting factor. A small barrier for changing misfit-dislocation density has a consequence – as a film's chemical environment changes during catalysis, its dislocation density can rapidly respond.
This research was partly supported by the Office of Basic EnergySciences, Division of Materials Sciences, U.S. Department of Energy,and by the Spanish Ministry of Economy and Competitiveness ProjectNo. MAT2015-64110-C02-1-P. Sandia National Laboratories is a mul-timission laboratory managed and operated by National Technology and Engineering Solutions of Sandia LLC, a wholly owned subsidiary of Honeywell International Inc. for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-NA0003525
Databáze: OpenAIRE